features center amplifying gate high surge current capability low thermal impedance high speed performance typical applications inverters choppers induction heating all types of force-commutated converters i t(av) 330 a @ t c 75 c i t(rms) 518 a i tsm @ 50hz 11000 a @ 60hz 11520 a i 2 t@ 50hz 605 ka 2 s @ 60hz 550 ka 2 s v drm /v rrm 400 to 800 v t q 15 s t j - 40 to 125 c parameters st333s units major ratings and characteristics case style to-209ae (to-118) st333s series inverter grade thyristors stud version 330a bulletin i25171 rev. d 03/03 1 www.irf.com
st333s series 2 www.irf.com bulletin i25171 rev. d 03/03 voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 04 400 500 08 800 900 electrical specifications voltage ratings frequency units 50hz 840 600 1280 1040 5430 4350 400hz 650 450 1280 910 2150 1560 1000hz 430 230 1090 730 1080 720 a 2500hz 140 60 490 250 400 190 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ s case temperature 50 75 50 75 50 75 c equivalent values for rc circuit 10 ? / 0.47f 10 ? / 0.47f 10 ? / 0.47f i tm 180 o el 180 o el 100 s i tm i tm current carrying capability v i t(av) max. average on-state current 330 a 180 conduction, half sine wave @ case temperature 75 c i t(rms) max. rms on-state current 518 dc @ 63c case temperature i tsm max. peak, one half cycle, 11000 t = 10ms no voltage non-repetitive surge current 11520 a t = 8.3ms reapplied 9250 t = 10ms 100% v rrm 9700 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 605 t = 10ms no voltage initial t j = t j max 550 t = 8.3ms reapplied 430 t = 10ms 100% v rrm 390 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 6050 ka 2 s t = 0.1 to 10ms, no voltage reapplied parameter st333s units conditions on-state conduction ka 2 s st333s 50
www.irf.com st333s series 3 bulletin i25171 rev. d 03/03 v tm max. peak on-state voltage 1.96 i tm = 1810a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25c, i t > 30a i l typical latching current 1000 t j = 25c, v a = 12v, ra = 6 ?, i g = 1a parameter st333s units conditions on-state conduction 0.91 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.92 (i > x i t(av) ), t j = t j max. v 0.58 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.58 (i > x i t(av) ), t j = t j max. m ? ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 ? source t j = t j max, i tm = 550a, commutating di/dt = 40a/s v r = 50v, t p = 500s, dv/dt = 200v/s switching parameter st333s units conditions 1000 a/s t d typical delay time 1.0 dv/dt maximum critical rate of rise of t j = t j max. linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st333s units conditions blocking 500 v/ s 50 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st333s units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25c, v a = 12v, ra = 6 ? t j = t j max, rated v drm applied t q max. turn-off time 15 s wt j = t j max, f = 50hz, d% = 50
st333s series 4 www.irf.com bulletin i25171 rev. d 03/03 t j max. junction operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case 0.10 dc operation r thcs max. thermal resistance, case to heatsink 0.03 mounting surface, smooth, flat and greased t mounting torque, 10% 48.5 nm (425) (ibf-in) wt approximate weight 535 g case style to-209ae (to-118) see outline table parameter st333s units conditions thermal and mechanical specifications c k/w non lubricated threads ordering information table 5 6 8 9 st 33 3 s 08 p f l 0 3 4 7 device code 2 1 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 k/w t j = t j max. 60 0.025 0.026 30 0.041 0.042 conduction angle sinusoidal conduction rectangular conduction units conditions ? r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a 7 - reapplied dv/dt code (for t q test condition) f = 200v/s 8 -t q code (l = 15s) 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) note: for metric device m24 x 1.5 contact factory
www.irf.com st333s series 5 bulletin i25171 rev. d 03/03 fast-on terminals outline table red cathode red silicon rubber 10.5 (0.41) 245 (9.65) 10 (0.39) white gate 4.3 (0.17) dia. ceramic housing white shrink nom. 47 ( 1.85) max. 245 (9.65) 38 (1.50) max. dia. 22 (0.87) max. max. 21 (0.82) max . sw 45 2 flexible lead 4.5 (0.18) max. c.s. 50mm (0.078 s.i.) 255 (10.04) red shrink 2 2 ( 0 . 8 6 ) m i n . 49 (1.92) max. 3/4"16 unf-2a 27.5 (1.08) 9 . 5 ( 0 . 3 7 ) m i n . case style to-209ae (to-118) all dimensions in millimeters (inches) amp. 280000-1 ref-250 * for metric device: m16 x 1.5 - lenght 21 (0.83) max. contact factory fig. 2 - current ratings characteristics 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduc tion angle st333s series r (dc) = 0.10 k/ w thjc 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduc tion period st3 3 3 s se r i e s r (dc) = 0.10 k/ w thjc fig. 1 - current ratings characteristics
st333s series 6 www.irf.com bulletin i25171 rev. d 03/03 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 4000 5000 6000 7000 8000 9000 10000 11000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) init ia l t = 125c no voltage reapplied rated v reapplied rrm j st333s series maximum non repetitive surge current 4000 5000 6000 7000 8000 9000 10000 110100 number of eq ua l amp litud e ha lf cyc le current pulses (n) peak half sine wave on-state current (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st3 3 3 s se r i e s at any rated load condition and with rated v applied following surge. rrm fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 0 3 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 k /w 0 . 3 k / w 0 . 5 k / w 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st3 3 3 s se r i e s t = 125c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 0 3 k / w 0 . 0 6 k / w 0 . 1 2 k / w 0 . 2 k / w 0 . 3 k / w 0 . 5 k / w 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 dc 180 120 90 60 30 rm s li m i t conduc tion period maximum average on-state power loss (w) average on-state current (a) st333s series t = 125c j
www.irf.com st333s series 7 bulletin i25171 rev. d 03/03 fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics 20 40 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 rate of fall of on-state current - di/dt (a/s) i = 500 a 300 a 200 a 100 a 50 a m a x i m u m re v e r se re c o v e r y c u r r e n t - i r r ( a ) st333s series t = 125 c j tm 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 rate of fall of on-state current - di/dt (a/s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery charge - qrr (c) st333s series t = 125 c j tm 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedanc e z (k/ w) st e a d y st a t e v a l u e r = 0.10 k/ w (dc operation) thjc st333s series 100 1000 10000 01234567 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st3 3 3 s se r i e s fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 11 - frequency characteristics 1e1 1e2 1e3 1e4 50 hz 400 100 pu l se ba se w i d t h ( s) 1000 1500 200 500 sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st333s se ries sinusoid a l p ulse t = 75c c tp 1e1 2000 2500 3000 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pu lse ba se w id t h ( s) pea k on-st a te current (a) 1000 1500 200 500 snub b er c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm 2000 st3 3 3 s se r i e s sinusoidal pulse t = 50c c 1e4 tp 3000 5000
st333s series 8 www.irf.com bulletin i25171 rev. d 03/03 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) 20 jo ule s p er p ulse 2 1 0.5 10 5 st3 3 3 s se r i e s rectangular pulse di/dt = 50a/s tp 1e1 3 0.4 0.3 0.2 fig. 14 - maximum on-state energy power loss characteristics 1e1 1e2 1e3 1e4 1e5 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) 20 jo ules p er p ulse 2 1 peak on-state current (a) 0.5 10 5 3 0.3 st3 3 3 s se r i e s sinusoidal pulse tp 1e4 0.2 fig. 13 - frequency characteristics fig. 12 - frequency characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 200 pulse ba se w id t h ( s) peak on-state current (a) 2000 snub ber circ uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st333s se ries trapezoidal pulse t = 5 0 c d i/ d t = 100a/ s c tp 1e4 500 3000 1e1 1e2 1e3 1e4 50 hz 400 100 1000 1500 200 pu lse ba se w id t h ( s) snub b e r c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm 2000 st3 3 3 s se r i e s trapezoidal pulse t = 75c d i/ d t = 100a/ s c tp 500 1e1 2500 3000 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 100 1500 200 pu l se ba se w i d t h ( s) peak on-state current (a) 2500 400 1000 50 hz 500 snub b er c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st333s se ries t rapezoidal pulse t = 50c di/dt = 50a/s c 1e4 2000 3000 1e1 1e2 1e3 1e4 50 hz 400 100 1000 1500 200 pu lse ba se w id t h ( s) 500 sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st333s se ries t rapezoidal pulse t = 75c d i/ d t = 50a/ s c 2000 2500 3000 1e1
www.irf.com st333s series 9 bulletin i25171 rev. d 03/03 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a ) tj = 2 5 c tj=125 c tj = - 4 0 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/ dt : 10v, 10ohms rated di/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3) de vic e : st333s series (4) frequency limited by pg(av) fig. 15 - gate characteristics ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 03/03 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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